PART |
Description |
Maker |
STK20C04 STK20C04-30 STK20C04-35 STK20C04-45 STK20 |
512 X 8 NON-VOLATILE SRAM, 30 ns, PDIP28 CMOS nvSRAM High Performance 512 x 8 Nonvolatile Static RAM 高性能的CMOS非易12 × 8非易失性静态RAM
|
List of Unclassifed Manufacturers ETC[ETC] SIMTEK Electronic Theatre Controls, Inc.
|
STK20C04 STK20C04-W25 STK20C04-W25I STK20C04-W35 S |
512 X 8 NON-VOLATILE SRAM, 35 ns, PDIP28 512 X 8 NON-VOLATILE SRAM, 45 ns, PDIP28 512 x 8 nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM 512 x 8 nvSRAM QuantumTrap CMOS Nonvolatile Static RAM 512 X 8 NON-VOLATILE SRAM, 25 ns, PDIP28
|
Simtek Corporation
|
IDT70T633S12BCI IDT70T633S15BF IDT70T633S15BFI IDT |
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208 122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA256 122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA256 HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 高.5V12/256K.3V 5011 2.5V的接口18 ASYNCHRONO美国双端口静态RAM JFET-Input Operational Amplifier 8-SOIC 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144 HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 8 ns, PBGA208 JFET-Input Operational Amplifier 14-SOIC 0 to 70 WRISTBAND, ELASTIC, ADJUSTABLE 4MM RoHS Compliant: NA High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 15ns
|
Integrated Device Technology, Inc. IDT
|
CY7C1020CV26-15ZSXE CY7C1020CV26-10 |
512 Kb (32 K ? 16) Static RAM 512 Kb (32 K × 16) Static RAM
|
Cypress Semiconductor
|
CY62148ELL-45ZSXA |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
CY7C1051DV33-12ZSXI CY7C1051DV33-12ZSXIT |
8-Mbit (512 K 16) Static RAM
|
Cypress
|
CY7C1049DV33 CY7C1049DV33-10ZSXI CY7C1049DV33-12VX |
4-Mbit (512 K x 8) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
CY7C1049CV33-8ZSXC CY7C1049CV33-10ZXI |
4-Mbit (512 K × 8) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 1-Mbit (64K x 16) Static RAM 1M x 4 Static RAM x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
HM64YLB36514BP-6H HM64YLB36514 |
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode) 16M Synchronous Late Write Fast Static RAM (512-kword 】 36-bit, Register-Latch Mode) Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas Electronics Corporation
|